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5LN01SP rev.0 i page 1 of 4 i www.onsemi.com features low on-resistance. ultrahigh-speed switching. 2.5v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 50 v gate-to-source voltage v gss 10 v drain current (dc) i d 0.1 a drain current (pulse) i dp pw 10 s, duty cycle 1% 0.4 a allowable power dissipation p d 0.25 w channel temperature tch 150 c storage temperature tstg - -55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 50 v zero-gate voltage drain current i dss v ds =50v, v gs =0 10 a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 a cutoff voltage v gs (off) v ds =10v, i d =100 a 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =50ma 0.13 0.18 s marking : yb continued on next page. ordering number : enn6559 package dimensions unit : mm 2180 [5LN01SP] 1 : source 2 : drain 3 : gate sanyo : spa 4.0 0.4 0.5 0.4 0.6 15.0 3.0 1.8 123 2.2 0.4 1.3 1.3 3.0 3.8nom 0.7 0.7 5LN01SP n-channel silicon mosfet ultrahigh-speed switching applications ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: 5LN01SP/d
5LN01SP rev.0 i page 2 of 4 i www.onsemi.com continued from preceding page. ratings parameter symbol conditions min typ max unit r ds (on)1 i d =50ma, v gs =4v 6 7.8 ? static drain-to-source on-state resistance r ds (on)2 i d =30ma, v gs =2.5v 7.1 9.9 ? r ds (on)3 i d =10ma, v gs =1.5v 10 20 ? input capacitance ciss v ds =10v, f=1mhz 6.6 pf output capacitance coss v ds =10v, f=1mhz 4.7 pf reverse transfer capacitance crss v ds =10v, f=1mhz 1.7 pf t urn-on delay time t d (on) see specified test circuit 18 ns rise time t r see specified test circuit 42 ns t urn-off delay time t d (off) see specified test circuit 190 ns fall time t f see specified test circuit 105 ns t otal gate charge qg v ds =10v, v gs =10v, i d =100ma 1.57 nc gate-to-source charge qgs v ds =10v, v gs =10v, i d =100ma 0.20 nc gate-to-drain ?iller?charge qgd v ds =10v, v gs =10v, i d =100ma 0.32 nc diode forward voltage v sd i s =100ma, v gs =0 0.85 1.2 v switching time test circuit pw=10 s d.c. 1% 4v 0v v in p. g 50 ? g s d i d =50ma r l =500 ? v dd =25v v out 5LN01SP v in static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? 0 0 0.02 0.01 0.04 0.03 0.06 0.05 0.08 0.07 0.2 0.10 0.09 0.4 0.6 0.8 1.0 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a 3.5v 6.0v 2.0v 2.5v 4.0v 3.0v 0 0.5 1.0 1.5 2.0 3.0 2.5 0 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a v ds =10v t a= --25 c 75 c 25 c 012 6 7 8 9 10 11 12 34 5 6 2 3 4 5 78910 gate-to-source voltage, v gs -- v r ds (on) -- v gs t a=25 c drain current, i d -- a r ds (on) -- i d it00054 it00055 it00056 it00057 v gs =1.5v i d =30ma 50ma 1.0 0.01 0.1 23 57 23 10 7 5 3 2 100 7 5 3 2 - -25 c 25 c t a=75 c v gs =4v
5LN01SP rev.0 i page 3 of 4 i www.onsemi.com 0.5 0.6 0.7 0.8 0.9 1.0 1.1 3 0.01 0.1 3 2 7 5 2 i f -- v sd v gs =0 25 c - -25 c t a=75 c 1.0 0.001 0.01 23 57 23 10 7 5 3 2 100 7 5 3 2 - -25 c t a=75 c 25 c 1.0 0.01 0.1 23 57 23 10 7 5 3 2 100 7 5 3 2 - -25 c t a=75 c 25 c static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? static drain-to-source on-state resistance, r ds (on) -- ? diode forward voltage, v sd -- v f orward current, i f -- a i f -- v sd 05 10 10 15 100 7 5 3 2 7 5 3 2 1.0 20 25 30 35 40 45 50 drain-to-source voltage, v ds -- v ciss, coss, crss -- v ds ciss, coss, crss -- pf ciss coss crss f=1mhz 0.01 10 0.1 23 57 1000 100 7 5 3 2 7 5 3 2 drain current, i d -- a sw time -- i d switching time, sw time -- ns v dd =25v v gs =4v t d (off) t d (on) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 1 2 3 4 5 6 7 8 9 10 t otal gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v v ds =10v i d =100ma it00062 it00063 it00064 it00065 t r t f - -60 0 2 4 6 8 10 12 14 - -40 --20 0 20 40 60 80 100 120 140 160 ambient temperature, ta -- c r ds (on) -- ta i d =30ma, v gs =2.5v i d =50ma, v gs =4.0v drain current, i d -- a f orward transfer admittance, ? yfs ? -- s ? yfs ? -- i d it00060 it00061 drain current, i d -- a r ds (on) -- i d v gs =2.5v drain current, i d -- a r ds (on) -- i d v gs =1.5v it00058 it00059 0.01 0.01 0.1 23 57 23 1.0 0.1 7 5 3 2 7 5 3 2 t a= --25 c 25 c 75 c v ds =10v
5LN01SP rev.0 i page 4 of 4 i www.onsemi.com 0204 060 100 120 140 0 80 0.3 0.25 0.2 0.05 0.1 0.15 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it02005 5LN01SP/d

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